FSU10A60

FRD-LowForwardVoltageDrop

FEATURES *FullyMoldedIsolationCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability

GCF10A60

LowForwardVoltagedropDiode

FEATURES *SimilartoTO220ABCase *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable

GSF10A60

LowForwardVoltagedropDiode

FEATURES *SimilartoTO-220ABCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable

GSF10A60B

FRD-LowForwardVoltageDrop

FEATURES *SimilartoTO-220ABCase *Ultra–FastRecovery *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *200Voltsthru600VoltsTypesAvailable

GSIB10A60

SINGLEPHASEGLASSPASSIVATEDBRIDGERECTIFIERVoltage:50to1000VCurrent:10.0A

ITK10A60W

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.38Ω •EasytocontrolGateswitching •Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performancean

K10A60D

SwitchingRegulatorApplications

•Lowdrain-sourceON-resistance:RDS(ON)=0.58Ω(typ.) •Highforwardtransferadmittance:|Yfs|=6.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=600V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

K10A60W

MOSFETsSiliconN-ChannelMOS(DTMOS??

Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA) Applications •SwitchingVoltageRegulators

S10A60

SCHOTTKYBARRIERRECTIFIERS(10A,30-60V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestat-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand

S10A60FR

THREEPHASEFULLWAVEBRIDGERECTIFIERASSEMBLY