TJ20A10M3

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TJ20A10M3

Swiching Regulator Applications

SwichingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=63mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=50S(typ.) •Lowleakagecurrent:IDSS=−10µA(max)(VDS=−100V) •Enhancement-model:Vth=−2.0to−4.0V(VDS=−10V,ID=−1mA)

TJ20A10M3

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

20A10C

PLASTICSILICONRECTIFIERS

20A10C

PlasticSiliconRectifiers

20A10FC

PlasticSiliconRectifiers

20A10FC

PLASTICSILICONRECTIFIER

FCH20A10

LowForwardVoltageDropDiode

SBDType FEATURES *TO-220ABCase *FullyMolded *DualDiodes–CathodeCommon *LowForwardVoltageDrop *HighSurgeCapability *Tj=150°Coperation

FCH20A10

SchottkyBarrierDiode

FRH20A10

SchottkyBarrierDiode