Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Swiching Regulator Applications

Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 50 S (typ.) • Low leakage current: IDSS = −10 µA (max) (VDS = −100 V) • Enhancement-model: Vth = −2.0 to −4.0 V (VDS = −10 V, ID = −1 mA)

文件：303.37 Kbytes 页数：6 Pages

TOSHIBA

东芝

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -20A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =90mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.23 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID -20 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS -100 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝