Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 16.8 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) (4) Enhancement mode: V

文件：261.44 Kbytes 页数：9 Pages

TOSHIBA

东芝

P-Channel 60 V (D-S) MOSFET

文件：973.5 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators

文件：245.43 Kbytes 页数：9 Pages

TOSHIBA

东芝

Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 16.8 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) (4) Enhancement mode: V

文件：261.44 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (P-ch single)

Application Scope：Motor drivers / Switching regulators\nPolarity：P-ch\nGeneration：U-MOSⅥ\nAEC-Q101：Conform\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID -30 A \nPower Dissipation PD 68 W \nDrain-Source voltage VDSS -60 V \nGate-Source voltage VGSS -20/+10 V ;

Toshiba

东芝