POWER TRANSISTORS(25A,40-100V,125W)

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MOSPEC

统懋

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications.

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Central

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

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SAVANTIC

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

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POINN

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS • Designed forComplementary Use with the TIP36 Series • 125 Wat25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Audio amplifier

FEATURES ● High collector voltage：VCEO=100V (min) ● Low collector-emitter saturation voltage ● Complementary to TIP36C ● RoHS product APPLICATIONS ● Audio amplifier ● General purpose

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JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

The TIP35C is a silicon Epitaxial-Base

NPN SILICON POWER TRANSISTORS • Designed forComplementary Use with the TIP36 Series • 125 Wat25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Complementary Silicon High Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

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TGS

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to TIP36C

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WINGS

永盛电子

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applica

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STMICROELECTRONICS

意法半导体