NPN POWER TRANSISTORS

Complementary TIP34F, 34AF, 34BF, 34CF General Purpose Power Amplifier and Switching Applications.

文件：126.18 Kbytes 页数：3 Pages

TEL

东电电子

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

文件：89.12 Kbytes 页数：2 Pages

CDIL

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

文件：337.99 Kbytes 页数：4 Pages

CDIL

POWER TRANSISTORS(10A,40-100V,80W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 80WATTS TIP33,TIP33A,TIP33B,TIP33C ---> NPN TIP34,TIP34A,TIP34B,TIP34C ---> PNP

文件：144.36 Kbytes 页数：3 Pages

MOSPEC

统懋

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP33 and TIP34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

文件：445.43 Kbytes 页数：2 Pages

Central

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

文件：105.51 Kbytes 页数：4 Pages

Motorola

摩托罗拉

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

文件：337.99 Kbytes 页数：4 Pages

CDIL

NPN High-Power Transistors Designed for general?뭦urpose power amplifier and switching

Designed for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • These are Pb−Free Devices*

文件：109.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

文件：102.85 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose

文件：48.04 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体