TIP121中文资料中等功率 NPN 达林顿双极功率晶体管数据手册ONSEMI规格书

描述 Description

The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) are complementary devices.

特性 Features

• High DC Current Gain -hFE = 2500 (typ) @ IC = 4.0 Adc
• Collector-Emitter Sustaining Voltage @ 100 mAVCEO(sus) = 60 Vdc (Min)TIP120, TIP125 VCEO(sus) = 80 Vdc (Min)TIP121, TIP126VCEO(sus) = 100 Vdc (Min)TIP122, TIP127
• Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc(Max) @ IC= 3.0 Adc= 4.0 Vdc(Max) @ IC= 5.0 Adc
• Monolithic Construction with Built-In Base-Emitter Shunt Resistors
• Compact TO-220 AB Package
• Pb-Free Packages are Available

简介

TIP121属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由ONSEMI制造生产的TIP121晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。