PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Collec

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件：157.56 Kbytes 页数：6 Pages

POINN

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP125/126/127 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications.

文件：127.43 Kbytes 页数：4 Pages

SAVANTIC

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP125/126/127

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SEMIHOW

Silicon Power darlington Complementary transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR TIP120, TIP125 series types are Complementary Silicon Power Darlington Transistors designed for low speed switching and amplifier applications.

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Central

Si-Epitaxial PlanarTransistors

Si-Epitaxial Planar Transistors Collector current – Kollektorstrom 5 A Plastic case TO-220AB Weight approx. – Gewicht ca. 2.2 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

文件：49.35 Kbytes 页数：2 Pages

Diotec

德欧泰克

NPN Epitaxial Darlington Transistors

Features • Halogen free available upon request by adding suffix -HF • Mounting Torgue: 5 in-lbs Maximum • Low collector-emitter saturation voltage • Amplifier applications-emitter shunt resistors • TO-220 compact package • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates Ro

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MCC

Plastic Medium Power Complementary Silicon Transistor

TEST SPECIFICATION Plastic Medium-Power Complementary Silicon Transistor

文件：49.07 Kbytes 页数：1 Pages

FCI

富加宜

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件：206.87 Kbytes 页数：4 Pages

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

Motorola

摩托罗拉