PNP Transistor Bare Die

Features Collector current up to 2A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

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SS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP115 and TIP117. ■ STMicroe

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STMICROELECTRONICS

意法半导体

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

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CDIL

Silicon Power darlington Complementary transistors

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Central

PNP Epitaxial Silicon Darlington Transistors

Features • High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) • Low Collector-Emitter Saturation Voltage • Complementary to TIP110/111/112 • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designat RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating

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MCC

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP110/111/112 APPLICATIONS • For industrial use

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ISC

无锡固电

TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR

Description Designed for use in general purpose amplifier and low-speed switching applications. Pinning 1 = Base 2 = Collector 3 = Emitter

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DCCOM

道全

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NPN complements are TIP110-111-112 Compliance to RoHS.

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COMSET

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

文件：269.51 Kbytes 页数：6 Pages

Motorola

摩托罗拉

POWER TRANSISTORS(2.0A,60-100V,50W)

文件：146.97 Kbytes 页数：3 Pages

MOSPEC

统懋