Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP100/101/102 APPLICATIONS • For industrial use

文件：93.61 Kbytes 页数：3 Pages

SAVANTIC

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE(sat) of 2.5 V at IC = 8 A

文件：152.94 Kbytes 页数：6 Pages

POINN

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

文件：97.95 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

DESCRIPTION ·Low saturation voltage. ·High reliability ·High breakdown voltage APPLICATIONS ·High-Voltage Switching

文件：245.7 Kbytes 页数：2 Pages

ISC

无锡固电

PNP SILICON POWER DARLINGTONS

TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

文件：763.31 Kbytes 页数：5 Pages

TRSYS

Transys Electronics

Darlington Power Transistors (PNP)

Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

文件：241.38 Kbytes 页数：4 Pages

TAITRON

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. Also TIP105 is a PNP type. ■ STMicroelectro

文件：35.19 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

文件：320.51 Kbytes 页数：3 Pages

CDIL

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

文件：550.61 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complementary to TIP115/116/117 • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) • Low Collector-Emitter Saturation Voltage • Industrial Use

文件：49.25 Kbytes 页数：4 Pages

Fairchild

仙童半导体