Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

文件：269.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

文件：153.15 Kbytes 页数：3 Pages

boca

博卡

Silicon Power darlington Complementary transistors

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Central

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

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CDIL

Silicon NPN Darlington Power Transistor

Features • Halogen free available upon request by adding suffix -HF • The complementary PNP types are the TIP115/116/117 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Mois

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MCC

POWER TRANSISTORS(2.0A,60-100V,50W)

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MOSPEC

统懋

Darlington Transistor

Description: Designed for general-purpose amplifier and low speed switching applications. Features: • Collector-emitter sustaining voltage-VCEO (sus) = 60V (Min.) - TIP110, TIP115 • Collector-emitter saturation voltage-VCE (sat) = 2.5V (Max.) at IC = 2A • Monolithic construction with built-

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MULTICOMP

易络盟

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP115-116-117 Compliance to RoHS.

文件：103.57 Kbytes 页数：3 Pages

COMSET

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

文件：269.51 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP115/116/117 APPLICATIONS • For industrial use

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ISC

无锡固电