TIP110

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementarytoTIP115/116/117 •HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse

TIP110

PLASTIC POWER TRANSISTORS

IntendedforuseinMediumPowerLinearandSwitchingApplications

TIP110

Silicon Power darlington Complementary transistors

TIP110

DARLINGTON TRANSISTOR (NPN)

DARLINGTONTRANSISTOR(NPN) FEATURES •HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse

TIP110

SILICON DARLINGTON POWER TRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe. Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. PNPcomplementsareTIP115-116-117 CompliancetoRoHS.

TIP110

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

TIP110

Silicon NPN Darlington Power Transistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP115/116/117 APPLICATIONS •Forindustrialuse

TIP110-7

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

APPLICATIONS nLINEARANDSWITCHINGINDUSTRIAL EQUIPMENT DESCRIPTION TheTIP110andTIP112aresilicon Epitaxial-BaseNPNtransistorsinmonolithic DarlingtonconfigurationmountedinJedec TO-220plasticpackage.Theyareintentedfor useinmediumpowerlinearandswitching applicatio

TIP110A

TTIP110A PNP Epitaxial Silicon Transistor

Collectorcurrent10A CollectordisspationPc=75W(Tc=25°C)

TIP110A

LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR

LOWSATURATIONVOLTAGEPNPDARLINGTONTRANSISTOR DESCRIPTION TheUTCTIP110Aisdesignedforusingingeneralpurposeamplifierandswitchingapplications. FEATURES *LowVCE(SAT) *HighCurrentGain