Power Darlingtons for Linear and Switching Applications

TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

文件：26.06 Kbytes 页数：2 Pages

boca

博卡

NPN EPITAXIAL TRANSISTOR

DESCRIPTION The UTC TIP102 is designed for using in general purpose amplifier and switching applications. FEATURES * Low VCE(SAT) * High Current Gain * Complementary to TIP107

文件：162.86 Kbytes 页数：4 Pages

UTC

友顺

Monolithic Construction With Built In Base- Emitter Shunt Resistors

• Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE =1000 @ V ce =4V, Ic =3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP105/106/107

文件：51.21 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

文件：218.99 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

文件：75.05 Kbytes 页数：2 Pages

TEL

东电电子

Motion Controller using Incremental Encoder

Application Information The TIP102 family consists of IndustryPack® compatible modules with complete one or two axes high precision motion control interfaces, using incremental encoder with RS422 or TTL signal level for position feedback. The transition module TIP102-TM-xx is required for the sig

文件：170.27 Kbytes 页数：2 Pages

TEWS

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

文件：97.95 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP105, TIP106 and TIP107 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE(sat) of 2.5 V at IC = 8 A

文件：149.29 Kbytes 页数：6 Pages

POINN

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS ·For industrial use

文件：93.13 Kbytes 页数：3 Pages

SAVANTIC

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP105/106/107

文件：744.9 Kbytes 页数：5 Pages

SEMIHOW