Monolithic Construction With Built In Base- Emitter Shunt Resistors

• Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE =1000 @ V ce =4V, Ic =3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP105/106/107

文件：51.21 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

文件：218.99 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power Darlingtons for Linear and Switching Applications

TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

文件：26.06 Kbytes 页数：2 Pages

BOCA

博卡

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

文件：200.04 Kbytes 页数：4 Pages

MOSPEC

统懋

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP105-106-107 Compliance to RoHS.

文件：102.87 Kbytes 页数：3 Pages

COMSET

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V

文件：142.9 Kbytes 页数：3 Pages

ISC

无锡固电

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP105/106/107

文件：744.9 Kbytes 页数：5 Pages

SEMIHOW

Darlington Power Transistors (NPN)

Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

文件：240.33 Kbytes 页数：4 Pages

TAITRON

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP102 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP107. Also TIP105 is a PNP type. ■ STMicroelectro

文件：35.19 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

Motion Controller using Incremental Encoder

Application Information The TIP102 family consists of IndustryPack® compatible modules with complete one or two axes high precision motion control interfaces, using incremental encoder with RS422 or TTL signal level for position feedback. The transition module TIP102-TM-xx is required for the sig

文件：170.27 Kbytes 页数：2 Pages

TEWS