TIP112

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP110andTIP112aresiliconEpitaxial-BaseNPNtransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP115andTIP117. ■STMicroe

TIP112

PlasticMedium-PowerComplementarySiliconTransistors

PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain− hFE=2500(Typ)@IC =1.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)

TIP112

TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlow-speedswitchingapplications.

TIP112

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications TO-220PlasticPackage

TIP112

PlasticMedium-PowerComplementarySiliconTransistors

TIP112

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

DESCRIPTION TheUTCTIP112isdesignedforsuchapplicationsas:DC/DCconverterssupplylineswitching,batterycharger,LCDbacklighting,peripheraldrivers,Driverinlowsupplyvoltageapplications(e.g.lampsandLEDs)andinductiveloaddriver(e.g.relays,buzzersandmotors). FEATURES *

TIP112

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP115/116/117 APPLICATIONS •Forindustrialuse

TIP112

DarlingtonPowerTransistors(NPN)

DarlingtonPowerTransistors(NPN) Features •Designedforgeneral-purposeamplifierandlowspeed switchingapplications •RoHSCompliant

TIP112

TO-220-PowerTransistorsandDarlingtons

TIP112

SiliconNPNDarlingtonPowerTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •ThecomplementaryPNPtypesaretheTIP115/116/117respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •Mois