GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR

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TI

德州仪器

OPTOCOUPLERS

文件：84.18 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR

TI

德州仪器

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

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MOSPEC

统懋

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

文件：218.99 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

文件：218.99 Kbytes 页数：6 Pages

ONSEMI

安森美半导体