TIP117

PNPEpitaxialSiliconDarlingtonTransistors

Features •HighDCCurrentGain:hFE=1000@VCE=4.0V,IC=1.0A(Min.) •LowCollector-EmitterSaturationVoltage •ComplementarytoTIP110/111/112 •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating

TIP117

TECHNICALSPECIFICATIONSOFPNPDARLINGTONTRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlow-speedswitchingapplications. Pinning 1=Base 2=Collector 3=Emitter

TIP117

SiliconPNPDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP110/111/112 APPLICATIONS •Forindustrialuse

TIP117

DarlingtonPowerTransistors(PNP)

Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant

TIP117

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

TIP117

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP110/111/112

TIP117

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP110,TIP111andTIP112 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A

TIP117

PlasticMedium-PowerComplementarySiliconTransistors

PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain− hFE=2500(Typ)@IC =1.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)

TIP117

DARLINGTON2AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP117

POWERTRANSISTORS(2.0A,60-100V,50W)