TIP106

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−

TIP106

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc

TIP106

PNPSILICONPOWERDARLINGTONS

TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

TIP106

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBaseEmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP100/101/102

TIP106

PowerDarlingtonsforLinearandSwitchingApplications

TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

TIP106

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

TIP106

SiliconPNPDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP100/101/102 APPLICATIONS •Forindustrialuse

TIP106

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=-3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-80V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max)@IC=-3A =

TIP106

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP100/101/102

TIP106

PNPPlasticMedium-PowerSiliconTransistors

Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •LowCollector-EmitterSaturationVoltage •MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors •TO-220Compac