SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA □ Application LNA and wide band amplifier up to GHz range

文件：221.65 Kbytes 页数：11 Pages

AUK

NPN SiGe RF TRANSISTOR

文件：206.98 Kbytes 页数：11 Pages

TACHYONICS

NPN SiGe RF TRANSISTOR

文件：206.98 Kbytes 页数：11 Pages

TACHYONICS

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB at f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz at VCE = 8 V, IC = 15 mA □ Application LNA and wide band amplifier up to GHz range

文件：221.65 Kbytes 页数：11 Pages

AUK

NPN Planer RF TRANSISTOR

[Tachyonics CO,. LTD] □ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 8 V, IC = 5 mA o High Power Gain MAG =18 dB Typ. @ f = 1 GHz, VCE = 8 V, IC =15 mA o High Transition Frequency fT = 10 GHz Typ. @ VCE = 8 V, IC = 15 mA □ Application LNA and wide band ampli

文件：99.73 Kbytes 页数：10 Pages

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