Solid Tantalum Surface Mount Chip Capacitors

文件：1.13302 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Topstek Current Transducer

Features ◆ Highly reliable Hall Effect device ◆ Compact and light weight ◆ Fast response time ◆ Excellent linearity of the output voltage over a wide input range ◆ Excellent frequency response (> 50 kHz) ◆ Low power consumption (12 mA nominal) ◆ Capable of measuring both DC and AC, both pul

文件：131.4 Kbytes 页数：3 Pages

TOPSTEK

Topstek Current Transducer

Features ◆ Highly reliable Hall Effect device ◆ Compact and light weight ◆ Fast response time ◆ Excellent linearity of the output voltage over a wide input range ◆ Excellent frequency response (> 50 kHz) ◆ Low power consumption (12 mA nominal) ◆ Capable of measuring both DC and AC, both pul

文件：131.4 Kbytes 页数：3 Pages

TOPSTEK

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1733 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ COMMON EMITTER ■ GOLD METALLIZATION

文件：40.81 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD −30dB ■ EFFICIENCY 40 ■ COMMON EMITTER ■

文件：77.37 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

文件：81.99 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

DESCRIPTION The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 pages x 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between t

文件：421.77 Kbytes 页数：43 Pages

TOSHIBA

东芝

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION The TH58BVG3S0HBAI4 is a single 3.3V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096 blocks. The device has a 4224-byte static register which allows program and read data to be tr

文件：2.56183 Mbytes 页数：54 Pages

TOSHIBA

东芝

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION The TH58BVG3S0HBAI6 is a single 3.3V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096 blocks. The device has a 4224-byte static register which allows program and read data to be tr

文件：2.57235 Mbytes 页数：54 Pages

TOSHIBA

东芝

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION The TH58BVG3S0HTAI0 is a single 3.3V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096 blocks. The device has a 4224-byte static register which allows program and read data to be tr

文件：2.5825 Mbytes 页数：54 Pages

TOSHIBA

东芝