丝印：TH4521；Package：SOIC(D)；THS452x Very Low Power, Negative Rail Input, Rail-To-Rail Output, Fully Differential Amplifier

1 Features 1• Fully Differential Architecture • Bandwidth: 145 MHz (A V = 1 V/V) • Slew Rate: 490 V/μs • HD2: –133 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • HD 3: –141 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • Input Voltage Noise: 4.6 nV/√Hz (f = 100 kHz) • THD+N: –112dBc (0.00025%) at 1 kHz (22-kH

文件：2.10875 Mbytes 页数：71 Pages

TI

德州仪器

丝印：TH4521；Package：SOIC(D)；THS452x Very Low Power, Negative Rail Input, Rail-To-Rail Output, Fully Differential Amplifier

1 Features 1• Fully Differential Architecture • Bandwidth: 145 MHz (A V = 1 V/V) • Slew Rate: 490 V/μs • HD2: –133 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • HD 3: –141 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • Input Voltage Noise: 4.6 nV/√Hz (f = 100 kHz) • THD+N: –112dBc (0.00025%) at 1 kHz (22-kH

文件：2.10875 Mbytes 页数：71 Pages

TI

德州仪器

丝印：TH4521；Package：SOIC(D)；THS452x Very Low Power, Negative Rail Input, Rail-To-Rail Output, Fully Differential Amplifier

1 Features 1• Fully Differential Architecture • Bandwidth: 145 MHz (A V = 1 V/V) • Slew Rate: 490 V/μs • HD2: –133 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • HD 3: –141 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • Input Voltage Noise: 4.6 nV/√Hz (f = 100 kHz) • THD+N: –112dBc (0.00025%) at 1 kHz (22-kH

文件：2.10875 Mbytes 页数：71 Pages

TI

德州仪器

丝印：TH4521；Package：SOIC(D)；THS452x Very Low Power, Negative Rail Input, Rail-To-Rail Output, Fully Differential Amplifier

1 Features 1• Fully Differential Architecture • Bandwidth: 145 MHz (A V = 1 V/V) • Slew Rate: 490 V/μs • HD2: –133 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • HD 3: –141 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • Input Voltage Noise: 4.6 nV/√Hz (f = 100 kHz) • THD+N: –112dBc (0.00025%) at 1 kHz (22-kH

文件：2.10875 Mbytes 页数：71 Pages

TI

德州仪器

丝印：TH4521；Package：SOIC(D)；THS452x Very Low Power, Negative Rail Input, Rail-To-Rail Output, Fully Differential Amplifier

1 Features 1• Fully Differential Architecture • Bandwidth: 145 MHz (A V = 1 V/V) • Slew Rate: 490 V/μs • HD2: –133 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • HD 3: –141 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • Input Voltage Noise: 4.6 nV/√Hz (f = 100 kHz) • THD+N: –112dBc (0.00025%) at 1 kHz (22-kH

文件：2.10875 Mbytes 页数：71 Pages

TI

德州仪器

丝印：TH4521；Package：SOIC(D)；THS452x Very Low Power, Negative Rail Input, Rail-To-Rail Output, Fully Differential Amplifier

1 Features 1• Fully Differential Architecture • Bandwidth: 145 MHz (A V = 1 V/V) • Slew Rate: 490 V/μs • HD2: –133 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • HD 3: –141 dBc at 10 kHz (1 VRMS, RL = 1 kΩ) • Input Voltage Noise: 4.6 nV/√Hz (f = 100 kHz) • THD+N: –112dBc (0.00025%) at 1 kHz (22-kH

文件：2.10875 Mbytes 页数：71 Pages

TI

德州仪器