Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT™ Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade

文件：575.3 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT™ Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade

文件：575.3 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT™ Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade

文件：575.3 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT™ Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade

文件：575.3 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT™ Molded Case, HI-TMP® High Temperature 175 °C, Automotive Grade

文件：575.3 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

Operating temperature up to 175°C with 50% voltage derating

Vishay

威世

丝印：TH4002SCTB；Package：TO263AB；40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Engine Management Systems  Body Control Electronics  DC-DC Converters Featur

文件：610.79 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：TH45M5LS；Package：PowerDI5060-8；40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features - Rated to +175°C – Ideal for High Ambient Temperature Environments - 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application - High Conversion Efficiency - Low RDS(ON) – Minimizes Power Losses - Wettable Flank for Improved Optica

文件：592.62 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：TH45M5LS；Package：PowerDI5060-8；40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Features - Rated to +175°C – Ideal for High Ambient Temperature Environments - 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application - High Conversion Efficiency - Low RDS(ON) – Minimizes Power Losses - Wettable Flank for Improved Optica

文件：592.76 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：TH45M5SS；Package：PowerDI5060-8；40V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Feature - Rated to +175°C – Ideal for High Ambient Temperature Environments - 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application - High Conversion Efficiency - Low RDS(ON) – Minimizes Power Losses - Wettable Flank for Improved Optical

文件：587.24 Kbytes 页数：8 Pages

DIODES

美台半导体