丝印：80N04P；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF80 N04 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to mini

文件：3.8401 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

文件：1.1664 Mbytes 页数：5 Pages

YFWDIODE

佑风微

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Application Battery protection Load switch Uninterruptible power supply

文件：1.98075 Mbytes 页数：5 Pages

YFWDIODE

佑风微

N-Channel 4 -V (D-S) MOSFET

文件：1.26306 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM80N04Q uses advanced trench technology and design to provide excellent RDS(ON) with

文件：568.35 Kbytes 页数：6 Pages

ADV

爱德微

N-Channel Power MOSFET

文件：1.35541 Mbytes 页数：4 Pages

JIANGSU

长电科技