TF80N04

Marking：80N04P；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

●GeneralDescription TheTF80N04combinesadvancedtrenchMOSFET technologywithalowresistancepackagetoprovide extremelylowRDS(ON).Thisdeviceisidealforloadswitch andbatteryprotectionapplications. ●Features AdvancehighcelldensityTrenchtechnology LowRDS(ON)tomini

80N04

N-Channel4-V(D-S)MOSFET

ADM80N04Q

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM80N04QusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

CJP80N04

N-ChannelMOSFETusesadvancedtrenchtechnology

CJP80N04

N-ChannelPowerMOSFET

HM80N04K

N-ChannelEnhancementModePowerMOSFET

LMAK80N04

N-ChannelEnhancementModePowerMOSFET

NP80N04CHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode

NP80N04CHE

N-Channel40-V(D-S)MOSFET

NP80N04CHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF