丝印：TF30P02；Package：TO-251；P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF30P02 combines advanced trench MOSFET technology with a low resistance package toprovide extremely low RDS(ON) . ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resist

文件：2.20014 Mbytes 页数：5 Pages

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文件：674.62 Kbytes 页数：2 Pages

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文件：560.33 Kbytes 页数：6 Pages

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