N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF3622 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =30V,ID =25A RDS(ON) =

文件：1.6872 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

低压MOSFET

TUOFENG

拓锋半导体

N-Channel Enhancement Mode Power MOSFET

General Description The TF3622DS is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The TF3622DS meet the RoHS and Green Product requirement,100 EAS guarante

文件：3.37271 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

Bi-Spectrum AI Thermal Camera

• Bi-spectrum monitoring with 2MP visible & QVGA thermal • AI based Object classification with visible channel only (person) • Remote Temperature Monitoring within -20 ~ 130°C range • 6 of quadrangle ROI areas for temperature monitoring • Compact and Light-weight for Indoor purpose

文件：1.12431 Mbytes 页数：5 Pages

HANWHAVISION

韩华

N-Channel MOSFET uses advanced trench technology

文件：1.1436 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel MOSFET uses advanced trench technology

文件：1.37936 Mbytes 页数：4 Pages

DOINGTER

杜因特