MOSFET

N沟道增强型功率MOSFET采用Trench工艺针对更低Rds(on)和更高载流能力进行优化。该类产品非常适合要求高性能和耐用性的中低频应用，如PC/NB主板、负载开关和无线充等。 1.较低的导通损耗和开关损耗\n2.雪崩能力强\n3.100%雪崩测试;

Vergiga

威兆半导体

N-Channel MOSFET uses advanced trench technology

文件：1.37936 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-Channel MOSFET

• N-Channel\n• Enhancement mode\n• Low on-resistance RDS(on) @ VGS=4.5 V\n• Fast Switching and High efficiency\n• Pb-free lead plating; RoHS compliant;

Vergiga

威兆半导体

WorkWise Height-Adjustable Sit-Stand Desktop Workstation, 36 x 22 in. Monitor Platform

文件：170.88 Kbytes 页数：3 Pages

TRIPPLITE

LMG3622 650-V 120-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.2679 Mbytes 页数：29 Pages

TI

德州仪器

LMG3622 650-V 120-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650-V 120-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.33869 Mbytes 页数：30 Pages

TI

德州仪器