首页 >TF21814-TUH>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HIGH-ANDLOW-SIDEDRIVER | IRF International Rectifier | IRF | ||
Floatingchanneldesignedforbootstrapoperation | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HIGH-ANDLOW-SIDEDRIVER | IRF International Rectifier | IRF | ||
HIGH-SIDEANDLOW-SIDEGATEDRIVERINSO14 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
HIGH-SIDEANDLOW-SIDEGATEDRIVERINSO-14 Features -FloatingHigh-SideDriverinBootstrapOperationto600V -DrivesTwoN-ChannelMOSFETsorIGBTsinaHalfBridgeConfiguration -1.9ASource/2.3ASinkOutputCurrentCapability -OutputsToleranttoNegativeTransients -WideLow-SideGateDriverandLogicSupply:10Vto20V - | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
HIGH-SIDEANDLOW-SIDEGATEDRIVER | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HIGHANDLOWSIDEDRIVER | IRF International Rectifier | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2213(S)isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.LogicinputsarecompatiblewithstandardCMOSorLSTT | IRF International Rectifier | IRF | ||
HIGHANDLOWSIDEDRIVER Description TheIR2181(4)(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOS | IRF International Rectifier | IRF |
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