丝印：TF100N03M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF100N03M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：4.67814 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

文件：275.27 Kbytes 页数：5 Pages

UTC

友顺

N-CHANNEL MOSFET ARRAY FOR SWITCHING

文件：364.35 Kbytes 页数：8 Pages

UTC

友顺

N-Channel 30-V (D-S) MOSFET

文件：961.83 Kbytes 页数：7 Pages

VBSEMI

微碧半导体