N-Channel 30-V (D-S) MOSFET

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100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

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100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

文件：275.27 Kbytes 页数：5 Pages

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100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

文件：275.27 Kbytes 页数：5 Pages

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100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

文件：275.27 Kbytes 页数：5 Pages

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100A, 30V N-CHANNEL POWER MOSFET

文件：275.74 Kbytes 页数：5 Pages

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100A, 30V N-CHANNEL POWER MOSFET

文件：275.74 Kbytes 页数：5 Pages

UTC

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100A, 30V N-CHANNEL POWER MOSFET

文件：275.74 Kbytes 页数：5 Pages

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N-CHANNEL POWER MOSFET

文件：302.16 Kbytes 页数：7 Pages

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N-CHANNEL MOSFET ARRAY FOR SWITCHING

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