TE28F128J3D-75

Numonyx??Embedded Flash Memory (J3 v. D)

Introduction ThisdocumentcontainsinformationpertainingtotheNumonyx™EmbeddedFlashMemory(J3vD)devicefeatures,operation,andspecifications. ProductFeatures ■Architecture —Symmetrical128-Kbyteblocks —256Mbit(256blocks) —128Mbit(128blocks) —64Mbit

TE28F128J3D75A

Package：56-TFSOP（0.724"，18.40mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC FLASH 128MBIT PARALLEL 56TSOP

TE28F128J3D75B TR

Package：56-TFSOP（0.724"，18.40mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC FLASH 128MBIT PARALLEL 56TSOP

28F128J3A

3VoltIntelStrataFlashMemory

ProductOverview The0.25µ3VoltIntelStrataFlashmemoryfamilycontainshigh-densitymemoriesorganizedas16Mbytesor8Mwords(128-Mbit),8Mbytesor4Mwords(64-Mbit),and4Mbytesor2Mwords(32-Mbit).Thesedevicescanbeaccessedas8-or16-bitwords.The128-Mbitdeviceisorganize

AS28F128J3A

NORCellArchitecture

AS28F128J3M

PlasticEncapsulatedMicrocircuit128Mb,x8andx16Q-FLASHMemoryEvenSectored,SingleBitperCellArchitecture

PlasticEncapsulatedMicrocircuit128Mb,x8andx16Q-FLASHMemory EvenSectored,SingleBitperCellArchitecture GeneralDescription ASI’s,AS28F128J3MEnhancedorMil-TempvariantofMicron’sQ-Flashfamilyofdevices,isanonvolatile,electricallyblockerasable(FLASH),programmab

MT28F128J3

Q-FLASHTMMEMORY

GENERALDESCRIPTION TheMT28F128J3isanonvolatile,electricallyblockerasable(Flash),programmablememorycontaining134,217,728bitsorganizedas16,777,218bytes(8bits)or8,388,608words(16bits).This128Mbdeviceisorganizedasonehundredtwenty-eight128KBeraseblocks.TheMT28F64

MX28F128J3

128M[x8/x16]SINGLE3VPAGEMODEFLASHMEMORY

TE28F128J3C

IntelStrataFlashMemory(J3)