NOR Cell Architecture

文件：1.25619 Mbytes 页数：15 Pages

MICROSS

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

文件：112.74 Kbytes 页数：8 Pages

AUSTIN

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

文件：548.36 Kbytes 页数：52 Pages

Micron

美光

128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY

文件：35.62 Kbytes 页数：6 Pages

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