Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

文件：112.74 Kbytes 页数：8 Pages

AUSTIN

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

文件：112.74 Kbytes 页数：8 Pages

AUSTIN

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

文件：112.74 Kbytes 页数：8 Pages

AUSTIN

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

文件：112.74 Kbytes 页数：8 Pages

AUSTIN

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

文件：112.74 Kbytes 页数：8 Pages

AUSTIN

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

文件：112.74 Kbytes 页数：8 Pages

AUSTIN

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

文件：112.74 Kbytes 页数：8 Pages

AUSTIN

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

文件：112.74 Kbytes 页数：8 Pages

AUSTIN

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

文件：112.74 Kbytes 页数：8 Pages

AUSTIN

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory\nEven Sectored, Single Bit per Cell ArchitectureGeneral Description\nASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmable memory de • 100% Pin and Function compatible to Intel’s MLC Family\n• 2.7V to 3.6V VCC\n• Asynchronous Page Mode Reads\n• Industry Standard Pin-Out\n• Common Flash Interface [CFI]\n• Automatic WRITE and ERASE Algorithms\n• 128 bit protection register\n• Enhanced data protection feature with use of VPEN=VS;

Austin Semiconductor