首页 >TDA8933T其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
50VCERAMICDISC | NTE NTE Electronics | NTE | ||
AdvancedPMUforCoreLogicLUCY | ACTIVE-SEMI Active-Semi, Inc | ACTIVE-SEMI | ||
AdvancedPMUforCoreLogicLUCY | ACTIVE-SEMI Active-Semi, Inc | ACTIVE-SEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-20V,-4.3A,RDS(ON)=90mΩ@VGS=-4.5V. RDS(ON)=140mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfaceMountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualP-ChannelEnhancementModeFieldEffectTransistor VOLTAGE20VoltsCURRENT4.6Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
General-PurposeSwitchingDeviceApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
CWLASERDIODES CWLASERDIODES Highopticalpowerfromasinglechip FEATURES ●Highopticalpower&highradiantfluxdensity(CW) L8933series:0.5W/50µm L8446series:1W/100µm L8763series:1W/50µm L8828series:2W/100µm ●Highstability ●Longlife ●Compact | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | HAMAMATSU | ||
InGaAsAVALANCHEPHOTODIODES DESCRIPTION PD8XX3seriesareInGaAsavalanchephotodiodewhichhasasensitiveareaofφ35µm,PD8XX3issuitableforreceivingthelighthavingawavelengthbandof1000to1600nm.Thisphotodiodefeatureslownoise,ahighquantumefficiencyandahighspeedresponseissuitableforthelight | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
Rail-to-RailOutputOperationalAmplifiers | SGMICROSG Micro Corp 圣邦股份圣邦微电子（北京）股份有限公司 | SGMICRO |
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