首页 >TDA8514T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
BipolarTransistorsSiliconNPNEpitaxialType Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=120to240(VCE=2V,IC=0.3A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=0.15V(max)(IC=1.0A,IB=0.1A) (3)High-speedswitching:tf=170ns(typ.)(IC=1.0A) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedandass | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedandass | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8514VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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