首页 >TDA8510JU>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TransistorSiliconNPNEpitaxialType High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=120to300(IC=0.1A) •Lowcollector-emittersaturation:VCE(sat)=0.14V(max) •High-speedswitching:tf=0.2μs(typ) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SpecificationofHighPowerIREmittingDiodeChip | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SpecificationofHighPowerIREmittingDiodeChip DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ULTRAFASTRECOVERYRECTIFIER | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
MONOCODECWITHSPEAKERDRIVER DESCRIPTION TheWM8510isalowpower,highqualitymonocodecdesignedforVoiceoverInternetProtocol(VoIP)andDigitalTelephones.Thedeviceintegratessupportforonepseudo-differentialandonesingleendedinput(HandsetMicandSpeakerMic)andincludesdriversforspeakersorheadset | WolfsonWolfson Microelectronics plc 欧胜微电子 | Wolfson | ||
MONOCODECWITHSPEAKERDRIVER DESCRIPTION TheWM8510isalowpower,highqualitymonocodecdesignedforVoiceoverInternetProtocol(VoIP)andDigitalTelephones.Thedeviceintegratessupportforonepseudo-differentialandonesingleendedinput(HandsetMicandSpeakerMic)andincludesdriversforspeakersorheadset | WolfsonWolfson Microelectronics plc 欧胜微电子 | Wolfson |
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