首页 >TDA8210>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
COMPLEMENTARYBUFFERED-GATESCRS | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
COMPLEMENTARYBUFFERED-GATESCRS | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
COMPLEMENTARYBUFFERED-GATESCRSFORDUALPOLARITYSLICOVERVOLTAGEPROTECTION | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
DualN-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCApplications •Lowdrain−sourceONresistance:RDS(ON)=11mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=13S(typ.) •Lowleakagecurrent:IDSS=10µA(max)(VDS=30V) •Enhancementmode:Vth=1.3to | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsPortableEquipmentApplicationsNotebookPCApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SILICONNCHANNELMOSTYPELITHIUMBATTERYAPPLICATIONS LithiumIonBatteryApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=19mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=9.2S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=20V) •Enhancementmode:Vth=0.5~1.2V(VDS= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
POWERZENERS UZ8706,UZ8806SERIES AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber. | DIGITRON Digitron Semiconductors | DIGITRON | ||
POWERZENERS DESCRIPTION Onewattzenerdiodes,hermeticallysealedinglass. FEATURES •HighSurgeRatings •AQuartertheSizeofConventional1WattZeners •ImpervioustoMoisture | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
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