首页 >TDA8204T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSII) LithiumIonBatteryApplications PortableEquipmentApplications NotebookPCs •Smallfootprintduetosmallandthinpackage •Lowdrain−sourceONresistance:RDS(ON)=16mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=18S(typ.) •Lowleakagecurrent:IDSS=10µA(max)(VDS= | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsFieldEffectTransistorSiliconNChannelMOSType | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII) LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=13mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=15S(typ.) •Lowleakagecurrent:IDSS=10µA(max | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
NECsVARIABLEGAINAMPLIFIER | CEL California Eastern Labs | CEL | ||
LANDISCRETETRANSFORMERMODULES LANFILTEREDCONNECTORS LANGIGABITICCROSSREFERENCE LAN10/100BASE-TXICCROSSREFERENCE LAN10BASE-TICCROSSREFERENCE | pulse Pulse A Technitrol Company | pulse | ||
QuadPort10/100/1000BASE-TPHYwithR/GMII,R/TBIInterfaces GENERALDESCRIPTION: TheVSC8204isalowpower,lowcost,quadportGigabitEthernetPHY.ItisidealforGigabitEthernetSwitchapplicationsthatrequireaGMII/MII,RGMII,TBI,orRTBIMAC/Switchinterface.Vitesse’sproprietaryDSPtechnologyyieldsrobustperformanceandlowpowerconsum | VITESSE Vitesse Semiconductor Corporation | VITESSE |
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