TPC8004

SiliconNChannelMOSType(MOSVI)

TPCA8004-H

HighEfficiencyDC竊뢈CConverterApplications

TPCA8004-H

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(UltraHighspeedU-MOSIII)

HighEfficiencyDC／DCConverterApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:QSW=12.7nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=3.5mΩ(typ.) •Highforward

TPCA8004-H

N-Channel30V(D-S)MOSFET

TPCF8004

Lithium-IonSecondaryBatteries

TPCP8004

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCP8004

FieldEffectTransistorSiliconNChannelMOSType(U-MOS??

NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:Qg=26nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=7mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=21S(typ.) •Lowleakage

TPCS8004

High-SpeedSwitchingApplicationsSwitchingRegulatorApplicationsDC-DCConverterApplications

TPCS8004

SiliconNChannelMOSType(Pi-MOSV)

TPESD8004MUTAG

LowCapactionce4-LineUni-directionalTVSDiode

Features Ultralowcapacitance:0.1pFtypical(I/Oto1/0) Ultralowleakage:nAlevel Lowoperatingvoltage:3.3V Lowclampingvoltage Upto4datalinesandonepowerlineprotects Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischar