首页 >TDA8004CST>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ICcardinterface | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SiliconNChannelMOSType(MOSVI) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
HighEfficiencyDC竊뢈CConverterApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(UltraHighspeedU-MOSIII) HighEfficiencyDC／DCConverterApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:QSW=12.7nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=3.5mΩ(typ.) •Highforward | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Lithium-IonSecondaryBatteries | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
FieldEffectTransistorSiliconNChannelMOSType(U-MOS?? NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:Qg=26nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=7mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=21S(typ.) •Lowleakage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SiliconNChannelMOSType(Pi-MOSV) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
High-SpeedSwitchingApplicationsSwitchingRegulatorApplicationsDC-DCConverterApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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