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TDA8001T

Smartcardinterface

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TKD8001

ClockSynthesizerandDisplayDAC

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

TPC8001

SiliconNChannelMOSType(MOSVI)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCC8001-H

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCF8001

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIII)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=19mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=8S(typ.) •Lowleakagecurrent:IDSS=10μA(max.)(VDS=30V) •Enhancementmode:Vth=1.3to2.5V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCM8001-H

TOSHIBAFieldEffectTransistorSiliconN-ChannelMOSType(Ultra-High-SpeedU-MOSIII)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCM8001-H

HighSpeedandHighEfficiencyDC-DCConverters,NotebookPCApplications,PortableEquipmentApplications

High-EfficiencyDC/DCConverterApplications NotebookPCApplications Portable-EquipmentApplications •Smallfootprintduetoasmallandthinpackage •High-speedswitching •Smallgatecharge:QSW=6.0nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=7mΩ(typ.) •Highforwardtr

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCP8001-H

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(UltraHighspeedU-MOSIII)

HighEfficiencyDC/DCConverterApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetoasmallandthinpackage •Highspeedswitching •Smallgatecharge:QSW=3.6nC(typ.) •Lowdrain-sourceON-resistance:RDS(ON)=13mΩ(typ.) •Highforwardt

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TR8001

868.35MHzHybridTransceiver

rfm

RF Monolithics, Inc

TR8001

868.35MHzHybridTransceiver

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

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