TD350E中文资料先进的IGBT/MOSFET驱动器数据手册ST规格书

描述 Description

The TD350E device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems.

The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver.

The device includes a two-level turn-off feature with adjustable level and delay. This function protects against excessive overvoltage at turn-off in case of overcurrent or short-circuit conditions. The same delay set in the two-level turn-off feature is applied at turn-on to prevent pulse width distortion.

The device also includes IGBT desaturation protection and a FAULT status output, and is compatible with both pulse transformer and optocoupler signals.

特性 Features

• 1.5 A source/2.3 A sink (typ.) gate drive
• Active Miller clamp feature
• Two-level turn-off with adjustable level and delay
• Desaturation detection
• Fault status output
• Negative gate drive capability
• Input compatible with pulse transformer or optocoupler
• Separate sink and source outputs for easy gate driving
• UVLO protection
• 2 kV ESD protection (HBM)

简介

TD350E属于集成电路（IC）的栅极驱动器。由制造生产的TD350E栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。