Advanced IGBT/MOSFET driver

Description This device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows

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STMICROELECTRONICS

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先进的IGBT/MOSFET驱动器

The TD350E device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems.\n\n The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the us • 1.5 A source/2.3 A sink (typ.) gate drive \n• Active Miller clamp feature \n• Two-level turn-off with adjustable level and delay \n• Desaturation detection \n• Fault status output \n• Negative gate drive capability \n• Input compatible with pulse transformer or optocoupler \n• Separate sink and so;

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Package：14-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR IGBT HIGH-SIDE 14SO

STMICROELECTRONICS

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Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HIGH-SIDE 14SO

STMICROELECTRONICS

意法半导体