IRF9150

iscP-ChannelMOSFETTransistor

•DESCRIPTION •Bedesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower. •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.15Ω •

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRFP9150

25A,100V,0.150Ohm,P-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicon-gatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators, switchingc

IRH9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AE) InternationalRectifier’sRADHardHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenchara

IRH9150

SimpleDriveRequirements

IRHM9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA)

IRHM9150

SimpleDriveRequirements

IRHN9150

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.120ohm,Id=-22A)

InternationalRectifier’sRADHardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffec

IRHN9150

SimpleDriveRequirements

IRHN9150

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT