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U7SH08

2-INPUTANDGATE

DESCRIPTION TheU7SH08isa2-inputANDgatewhichprovidestheFunctionY=A*B.Thisdevicehaspower-downprotectivecircuit,preventingdevicedestructionwhenitispowereddown. FEATURES *OperationVoltageRange:2~5.5V *LowPowerCurrent:ICC=2μA(Max) *HighSpeed:tPD=4.3n

UTCUnisonic Technologies

友顺友顺科技股份有限公司

XC7SH08

High-speedSi-gateCMOSdevice,2-inputANDfunction

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

XC7SH08

2-inputANDgate

1.Generaldescription XC7SH08isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputANDfunction. 2.Features •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •CMOSinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E:exceeds

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

XC7SH08GV

High-speedSi-gateCMOSdevice,2-inputANDfunction

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

XC7SH08GV

2-inputANDgate

1.Generaldescription XC7SH08isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputANDfunction. 2.Features •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •CMOSinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E:exceeds

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

XC7SH08GW

2-inputANDgate

1.Generaldescription XC7SH08isahigh-speedSi-gateCMOSdevice.Itprovidesa2-inputANDfunction. 2.Features •Symmetricaloutputimpedance •Highnoiseimmunity •Lowpowerdissipation •CMOSinputlevels •Balancedpropagationdelays •ESDprotection: •HBMJESD22-A114E:exceeds

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

XC7SH08GW

High-speedSi-gateCMOSdevice,2-inputANDfunction

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

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