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74VHCT04	文件：128.16 Kbytes Page：8 Pages	HexInverter GeneralDescription TheVHCT04AisanadvancedhighspeedCMOSInverterfabricatedwithsilicongateCMOStechnology.ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Theinternalcircuitiscomposedof3stagesinc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
74VHCT04A	文件：128.16 Kbytes Page：8 Pages	HexInverter GeneralDescription TheVHCT04AisanadvancedhighspeedCMOSInverterfabricatedwithsilicongateCMOStechnology.ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Theinternalcircuitiscomposedof3stagesinc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
74VHCT04A	文件：52.54 Kbytes Page：7 Pages	HEXINVERTER DESCRIPTION The74VHCT04Aisanadvancedhigh-speedCMOSHEXINVERTERfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichprovideshighnoiseimmunityandstableoutput. ■HIGHSPEED:	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
74VHCT04A	文件：214.42 Kbytes Page：11 Pages	HEXINVERTER	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
74VHCT04A	文件：226.19 Kbytes Page：8 Pages	HexInverter GeneralDescription TheVHCT04AisanadvancedhighspeedCMOSInverterfabricatedwithsilicongateCMOStechnology.ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Theinternalcircuitiscomposedof3stagesinc	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
74VHCT04AFT	文件：152.52 Kbytes Page：7 Pages	CMOSDigitalIntegratedCircuitsSiliconMonolithic FunctionalDescription •HexInverter General The74VHCT04AFTisanadvancedhighspeedCMOSINVERTERfabricatedwithsilicongateC2MOStechnology. ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOS lowpowerdissipation. Theinputv	TOSHIBAToshiba Semiconductor 东芝株式会社东芝	TOSHIBA
74VHCT04AM	文件：128.16 Kbytes Page：8 Pages	HexInverter GeneralDescription TheVHCT04AisanadvancedhighspeedCMOSInverterfabricatedwithsilicongateCMOStechnology.ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Theinternalcircuitiscomposedof3stagesinc	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
74VHCT04AM	文件：226.19 Kbytes Page：8 Pages	HexInverter GeneralDescription TheVHCT04AisanadvancedhighspeedCMOSInverterfabricatedwithsilicongateCMOStechnology.ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Theinternalcircuitiscomposedof3stagesinc	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
74VHCT04AM	文件：52.54 Kbytes Page：7 Pages	HEXINVERTER DESCRIPTION The74VHCT04Aisanadvancedhigh-speedCMOSHEXINVERTERfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. Theinternalcircuitiscomposedof3stagesincludingbufferoutput,whichprovideshighnoiseimmunityandstableoutput. ■HIGHSPEED:	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
74VHCT04AMTC	文件：226.19 Kbytes Page：8 Pages	HexInverter GeneralDescription TheVHCT04AisanadvancedhighspeedCMOSInverterfabricatedwithsilicongateCMOStechnology.ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOSlowpowerdissipation. Theinternalcircuitiscomposedof3stagesinc	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI

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