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74VHC03

QUAD2-INPUTOPENDRAINNANDGATE

DESCRIPTION The74VHC03isanadvancedhigh-speedCMOSQUAD2-INPUTOPENDRAINNANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=3.7ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=2µA(MAX.)atTA=25°C ■HIGHNOISEIMMUN

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC03

QUAD2-INPUTOPENDRAINNANDGATE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC03FT

CMOSDigitalIntegratedCircuitsSiliconMonolithic

FunctionalDescription •Quad2-InputNANDGate(OpenDrain) General The74VHC03FTisanadvancedhighspeedCMOS2-INPUTNANDGATEfabricatedwithsilicongateC2MOS technology. ItachievesthehighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingtheCMOS low

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

74VHC03M

QUAD2-INPUTOPENDRAINNANDGATE

DESCRIPTION The74VHC03isanadvancedhigh-speedCMOSQUAD2-INPUTOPENDRAINNANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=3.7ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=2µA(MAX.)atTA=25°C ■HIGHNOISEIMMUN

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC03MTR

QUAD2-INPUTOPENDRAINNANDGATE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC03T

QUAD2-INPUTOPENDRAINNANDGATE

DESCRIPTION The74VHC03isanadvancedhigh-speedCMOSQUAD2-INPUTOPENDRAINNANDGATEfabricatedwithsub-micronsilicongateanddouble-layermetalwiringC2MOStechnology. ■HIGHSPEED:tPD=3.7ns(TYP.)atVCC=5V ■LOWPOWERDISSIPATION:ICC=2µA(MAX.)atTA=25°C ■HIGHNOISEIMMUN

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

74VHC03TTR

QUAD2-INPUTOPENDRAINNANDGATE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

TC74VHC03F

Quad2-InputNANDGate(opendrain)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC74VHC03F

QUAD2-INPUTNANDGATE(OPERDRAIN)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TC74VHC03FK

Quad2-InputNANDGate(opendrain)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

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