500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators

[TAK_CHEONG] Specification Features: ■ Zener Voltage Range 2.0 to 56 Volts ■ LL-34 (Mini-MELF) Package ■ Surface Device Type Mounting ■ Hermetically Sealed Glass ■ Compression Bonded Construction ■ All external surfaces are corrosion resistant and leads are readily solderable ■ 1st band in

文件：980.86 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

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500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators

Specification Features: ■ Zener Voltage Range 2.0 to 75 Volts ■ DO-35 Package (JEDEC) ■ Through-Hole Device Type Mounting ■ Hermetically Sealed Glass ■ Compression Bonded Construction ■ All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable ■ RoHS Compliant ■ Solder

文件：171.96 Kbytes 页数：5 Pages

TAK_CHEONG

德昌电子

262,144 WORD X 16 BIT DYNAMIC RAM

Description The TC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. The TC51V4260DFTS uti- lizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multip

文件：426.61 Kbytes 页数：7 Pages

TOSHIBA

东芝

262,144 WORD X 16 BIT DYNAMIC RAM

Description The TC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. The TC51V4260DFTS uti- lizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multip

文件：426.61 Kbytes 页数：7 Pages

TOSHIBA

东芝

262,144 WORD X 16 BIT DYNAMIC RAM

Description The TC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. The TC51V4260DFTS uti- lizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multip

文件：426.61 Kbytes 页数：7 Pages

TOSHIBA

东芝

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

文件：444.73 Kbytes 页数：9 Pages

TOSHIBA

东芝

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

文件：444.73 Kbytes 页数：9 Pages

TOSHIBA

东芝

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

文件：444.73 Kbytes 页数：9 Pages

TOSHIBA

东芝

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

文件：444.73 Kbytes 页数：9 Pages

TOSHIBA

东芝

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

文件：444.73 Kbytes 页数：9 Pages

TOSHIBA

东芝