TC51规格书应用电路供应代理微芯科技第7页-114ic电子网

首页 >TC51>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
TC511632FL-70	文件：631.54 Kbytes Page：13 Pages	32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The TC511632FL/FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL/FTL, utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FL/FTL op 文件：631.54 Kbytes 页数：13 Pages	TOSHIBA 东芝	TOSHIBA
TC511632FL-85	文件：631.54 Kbytes Page：13 Pages	32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The TC511632FL/FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL/FTL, utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FL/FTL op 文件：631.54 Kbytes 页数：13 Pages	TOSHIBA 东芝	TOSHIBA
TC511632FTL-10	文件：631.54 Kbytes Page：13 Pages	32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The TC511632FL/FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL/FTL, utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FL/FTL op 文件：631.54 Kbytes 页数：13 Pages	TOSHIBA 东芝	TOSHIBA
TC511632FTL-70	文件：631.54 Kbytes Page：13 Pages	32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The TC511632FL/FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL/FTL, utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FL/FTL op 文件：631.54 Kbytes 页数：13 Pages	TOSHIBA 东芝	TOSHIBA
TC511632FTL-85	文件：631.54 Kbytes Page：13 Pages	32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The TC511632FL/FTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FL/FTL, utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FL/FTL op 文件：631.54 Kbytes 页数：13 Pages	TOSHIBA 东芝	TOSHIBA
TC5116400BSJ	文件：442.34 Kbytes Page：8 Pages	4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu 文件：442.34 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA
TC5116400BSJ-60	文件：442.34 Kbytes Page：8 Pages	4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu 文件：442.34 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA
TC5116400BSJ-70	文件：442.34 Kbytes Page：8 Pages	4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu 文件：442.34 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA
TC5116400BST-60	文件：442.34 Kbytes Page：8 Pages	4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu 文件：442.34 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA
TC5116400BST-70	文件：442.34 Kbytes Page：8 Pages	4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu 文件：442.34 Kbytes 页数：8 Pages	TOSHIBA 东芝	TOSHIBA

<<<2 3 4 5 678 9 10 11 12 >>>

产品属性

产品编号：
TC51
制造商：
Cornell Dubilier Electronics (CDE)
类别：
电容器 > 铝电解电容器
系列：
TC
包装：
散装
容差：
-10%，+50%
ESR（等效串联电阻）：
15.27 欧姆 @ 120Hz
不同温度时使用寿命：
85°C 时为 1000 小时
工作温度：
-40°C ~ 85°C
极化：
极化
应用：
通用
大小 / 尺寸：
0.625" 直径 x 1.125" 长（15.88mm x 28.58mm）
安装类型：
通孔
封装/外壳：
轴向，
描述：
CAP ALUM 8UF 250V AXIAL

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	TC51V4265DFTS-60	TOSHIBA		TSSOP	800	正品原装--自家现货-实单可谈	询价
芯有半导体（深圳）有限公司	TC518512FTL-80	TOSHIBA	06+	SOP	1000	全新原装绝对有货	询价
齐创科技(上海,北京,青岛)有限公司	TC51832ASPL-10	TOSHIBA	23+	DIP28	5000	原装正品,假一罚十	询价
深圳市福田区绿盛电子商行	TC514400AP-80	TOSHIBA	2015+	SMD	19998	专业代理原装现货,特价热卖!	询价
深圳市益百分电子有限公司	TC514400AZL-60	TOSHIBA	96+	ZIP20	1690	全新原装进口自己库存优势	询价
深圳市勤思达科技有限公司	TC511664BJ-80	TOSHIBA	11+	SOJ40	8000	全新原装,绝对正品现货供应	询价
深圳市弘为电子有限公司	TC5118160BJ-70	TOSHIBA	24+	SOJ	17	原装现货假一罚十	询价
深圳市福安瓯科技有限公司	TC51832FL-10	TOS	25+	SOP28	2500	强调现货,随时查询!	询价
深圳市豪迈兴电子有限公司	TC518512AFI-10	TOSHIBA	24+	SO32L	6232	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市卓越微芯电子有限公司	TC518512FL-70	TOSHIBA	25+	SOP	270	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多TC51供应商更新时间2026-4-21 16:20:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号