TC51规格书应用电路供应代理微芯科技第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
TC511000J	文件：2.132 Mbytes Page：19 Pages	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult 文件：2.132 Mbytes 页数：19 Pages	TOSHIBA 东芝	TOSHIBA
TC511000J-10	文件：2.132 Mbytes Page：19 Pages	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult 文件：2.132 Mbytes 页数：19 Pages	TOSHIBA 东芝	TOSHIBA
TC511000J-12	文件：2.132 Mbytes Page：19 Pages	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult 文件：2.132 Mbytes 页数：19 Pages	TOSHIBA 东芝	TOSHIBA
TC511000J-85	文件：2.132 Mbytes Page：19 Pages	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult 文件：2.132 Mbytes 页数：19 Pages	TOSHIBA 东芝	TOSHIBA
TC511000P	文件：2.132 Mbytes Page：19 Pages	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult 文件：2.132 Mbytes 页数：19 Pages	TOSHIBA 东芝	TOSHIBA
TC511000P-10	文件：2.132 Mbytes Page：19 Pages	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult 文件：2.132 Mbytes 页数：19 Pages	TOSHIBA 东芝	TOSHIBA
TC511000P-12	文件：2.132 Mbytes Page：19 Pages	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult 文件：2.132 Mbytes 页数：19 Pages	TOSHIBA 东芝	TOSHIBA
TC511000P-85	文件：2.132 Mbytes Page：19 Pages	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult 文件：2.132 Mbytes 页数：19 Pages	TOSHIBA 东芝	TOSHIBA
TC511000Z	文件：2.132 Mbytes Page：19 Pages	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult 文件：2.132 Mbytes 页数：19 Pages	TOSHIBA 东芝	TOSHIBA
TC511000Z-10	文件：2.132 Mbytes Page：19 Pages	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult 文件：2.132 Mbytes 页数：19 Pages	TOSHIBA 东芝	TOSHIBA

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产品属性

产品编号：
TC51
制造商：
Cornell Dubilier Electronics (CDE)
类别：
电容器 > 铝电解电容器
系列：
TC
包装：
散装
容差：
-10%，+50%
ESR（等效串联电阻）：
15.27 欧姆 @ 120Hz
不同温度时使用寿命：
85°C 时为 1000 小时
工作温度：
-40°C ~ 85°C
极化：
极化
应用：
通用
大小 / 尺寸：
0.625" 直径 x 1.125" 长（15.88mm x 28.58mm）
安装类型：
通孔
封装/外壳：
轴向，
描述：
CAP ALUM 8UF 250V AXIAL

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	TC51V4265DFTS-60	TOSHIBA		TSSOP	800	正品原装--自家现货-实单可谈	询价
芯有半导体（深圳）有限公司	TC518512FTL-80	TOSHIBA	06+	SOP	1000	全新原装绝对有货	询价
齐创科技(上海,北京,青岛)有限公司	TC51832ASPL-10	TOSHIBA	23+	DIP28	5000	原装正品,假一罚十	询价
深圳市福田区绿盛电子商行	TC514400AP-80	TOSHIBA	2015+	SMD	19998	专业代理原装现货,特价热卖!	询价
深圳市益百分电子有限公司	TC514400AZL-60	TOSHIBA	96+	ZIP20	1690	全新原装进口自己库存优势	询价
深圳市勤思达科技有限公司	TC511664BJ-80	TOSHIBA	11+	SOJ40	8000	全新原装,绝对正品现货供应	询价
深圳市弘为电子有限公司	TC5118160BJ-70	TOSHIBA	24+	SOJ	17	原装现货假一罚十	询价
深圳市福安瓯科技有限公司	TC51832FL-10	TOS	25+	SOP28	2500	强调现货,随时查询!	询价
深圳市豪迈兴电子有限公司	TC518512AFI-10	TOSHIBA	24+	SO32L	6232	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市卓越微芯电子有限公司	TC518512FL-70	TOSHIBA	25+	SOP	270	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多TC51供应商更新时间2026-4-21 16:20:00

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