TC5116400BST-70中文资料东芝数据手册PDF规格书

Description

The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST

utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

margins, both internally and to the system user. Multiplexed address inputs permit the TC5116400BSJ/BST to be packaged in

a 26/24 pin plastic SOJ (300mil), 26/24 pin plastic TSOP (300mil). The package size provides high system bit densities and is

compatible with widely available automated testing and insertion equipment. System oriented features include single power

supply of 5V± 10 tolerance, direct interfacing capability with high performance logic families such as Schottky TTL

Features

4,194,304 word by 4 bit organization

Fast access time and cycle time

Single power supply of 5V± 10 with a built-in

Vaa generator

• Low Power

- 440mW MAX. Operating

(TC5116400BSJ/BST-60)

- 385mW MAX. Operating

- (TC5116400BSJ/BST-70)

- 5.5mW MAX. Standby

Outputs unlatched at cycle end allows two-

dimensional chip selection

• Common V/O capability using EARLY WRITE

operation

Read-Modify-Write, CAS before RAS refresh,

RAS-only refresh, Hidden refresh, Fast Page

Mode and Test Mode capability

• All inputs and outputs TTL compatible

• 4096 refresh cycles/64ms

• Package

TC5116400BSJ: SOJ26-P-300C

TC5116400BST: TSOP26-P-300D

Note: For packaging details see Mechanical Dimensions section.