首页 >TC4452VPA工控元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Pushbuttonvalve | FESTOFesto Corporation. 费斯托 | FESTO | ||
115dB768kHz32-bit2chPremiumDAC | AKMAsahi Kasei Microsystems 旭化成微电子旭化成微电子株式会社 | AKM | ||
115dB768kHz32-bit2chPremiumDAC | AKMAsahi Kasei Microsystems 旭化成微电子旭化成微电子株式会社 | AKM | ||
MOSFET20VN-CHANNELENHANCEMENTMODE FEATURES High-speedswitching,LowOn-resistance 1.2VLowgatedrive ESDprotected AvailableinSC89-3package DESCRIPTION VDS=20V VGS=±8V ID(A)=0.83A RDS(ON)=200mΩ(Typ.)@VGS=4.5V RDS(ON)=245mΩ(Typ.)@VGS=2.5V RDS(ON)=310mΩ(Typ.)@VGS=1.8V RDS(ON)=380mΩ(Typ.)@VGS=1.5V RDS(ON)= | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
100VN-ChannelMOSFET GeneralDescription TheAO4452isfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurposeapplicatio | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
100VN-ChannelMOSFET GeneralDescription TheAO4452isfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurposeapplicatio | WHXPCBshenzhen wanhexing Electronics Co.,Ltd 万和兴电子深圳万和兴电子有限公司 | WHXPCB | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
FastRecoveryandHighPowerDiode | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
WidebandVariable-GainAmplifierwithGainof10 TheEL4452isacompletevariablegaincircuit.Itofferswidebandwidthandexcellentlinearity,whileincludingapowerfuloutputvoltageamplifier,drawingmodestcurrent.ThehighergainandlowerinputnoisemakestheEL4452idealforuseinAGCsystems. Features •Completevariable-gainam | Intersil Intersil Corporation | Intersil |
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